CPH5812 no.7467-1/5 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7467a CPH5812 mosfet : p-channel silicon mosfet sbd : schottky barrier diode dc / dc converter applications features ? composite type with a p-channel sillicon mosfet (mch3317) and a schottky barrier diode (sbs010m) contained in one package facilitating high-density mounting. [mosfet] ? low on-resistance. ? ultrahigh-speed switching. ? 1.8v drive. [sbd] ? short reverse recovery time. ? low forward voltage. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss --12 v gate-to-source voltage v gss 10 v drain current (dc) i d --1.5 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --6.0 a allowable power dissipation p d mounted on a ceramic board (600mm 2 5 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 15 v nonrepetitive peak reverse surge voltage v rsm 15 v average output current i o 2a surge forward current i fsm 50hz sine wave, 1 cycle 10 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : qn any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n1004 ts im / n2603 ts im ta-3787
CPH5812 no.7467-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --12 v zero-gate voltage drain current i dss v ds =--12v, v gs =0 --10 m a gate-to-source leakage current i gss v gs = 8.0v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--6v, i d =--1ma --0.3 --1.0 v forward transfer admittance ? yfs ? v ds =--6v, i d =--0.8a 1.3 1.8 s r ds (on)1 i d =--0.8a, v gs =--4.5v 220 290 m w static drain-to-source on-state resistance r ds (on)2 i d =--0.4a, v gs =--2.5v 320 450 m w r ds (on)3 i d =--0.1a, v gs =--1.8v 430 650 m w input capacitance ciss v ds =--6v, f=1mhz 160 pf output capacitance coss v ds =--6v, f=1mhz 45 pf reverse transfer capacitance crss v ds =--6v, f=1mhz 35 pf turn-on delay time t d (on) see specified test circuit. 11 ns rise time t r see specified test circuit. 45 ns turn-off delay time t d (off) see specified test circuit. 29 ns fall time t f see specified test circuit. 30 ns total gate charge qg v ds =--6v, v gs =--4.5v, i d =--1.5a 2.6 nc gate-to-source charge qgs v ds =--6v, v gs =--4.5v, i d =--1.5a 0.25 nc gate-to-drain miller charge qgd v ds =--6v, v gs =--4.5v, i d =--1.5a 0.65 nc diode forward voltage v sd i s =--1.5a, v gs =0 --0.92 --1.5 v [sbd] reverse voltage v r i r =1.5ma 15 v forward voltage v f 1i f =0.5a 0.27 0.32 v v f 2i f =1a 0.30 0.35 v reverse current i r v r =6v 600 m a interterminal capacitance c v r =10v, f=1mhz cycle 65 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 15 ns thermal resistance rth(j-a) mounted on a ceramic board (600mm 2 5 0.8mm) 138 c/w package dimensions electrical connection unit : mm 2171 1.6 0.6 0.6 2.8 0.2 2.9 0.05 0.4 0.95 0.2 0.9 0.7 0.15 0.4 12 3 4 5 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode sanyo : cph5 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode top view 543 12
CPH5812 no.7467-3/5 switching time test circuit t rr test circuit [mosfet] [sbd] pw=10 m s d.c. 1% p. g 50 w g s d i d = --0.8a r l =7.5 w v dd = --6v v out CPH5812(mosfet) v in 0v --4.5v v in duty 10% 50 w 100 w 10 w --5v t rr 100ma 100ma 10ma 10 m s [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] r ds (on) -- v gs i d -- v ds i d -- v gs r ds (on) -- ta ? y fs ? -- i d i f -- v sd static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a --60 --40 --20 0 20 40 60 80 100 120 140 160 it04355 0 --0.1 --0.3 --0.6 --0.9 --1.2 --1.5 0 --0.5 --1.0 --1.5 --2.0 0 200 100 400 600 300 500 700 800 0 --0.2 --0.3 --0.4 --0.5 it04353 0 --0.5 --1.0 --1.5 --2.0 --3.0 --2.5 it04354 it04356 0 --1 --2 --3 --4 --5 --6 --7 --8 200 400 600 800 100 300 500 700 0 ta=25 c v gs = --1.0v --1.5v --2.5v --1.8v --4.5v --3.0v --3.5v --0.8a i d = --0.4a i d = --0.1a, v gs = --1.8v i d = --0.4a, v gs = --2.5v i d = --0.8a, v gs = --4.5v v ds = --6v 25 c --25 c ta=75 c 25 c 75 c ta= --25 c it04357 --0.01 23 57 --0.1 23 23 57 --1.0 0.1 1.0 7 5 3 2 5 3 2 it04358 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --0.1 --1.0 7 5 3 2 5 3 2 75 c 25 c ta= --25 c v ds = --6v v gs =0 --25 c 25 c ta=75 c
CPH5812 no.7467-4/5 reverse voltage, v r -- v i r -- v r reverse current, i r -- a forward voltage, v f -- v forward current, i f -- ma i f -- v f [sbd] [sbd] 0 0.1 0.01 0.001 0.0001 0.00001 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 61216 41014 28 0 0.1 0.01 0.3 0.4 0.5 0.1 0.2 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 ta=125 c 25 c 50 c 75 c 100 c ta=100 c 75 c 50 c 25 c it05881 it05904 --10 --1.0 --0.1 23 57 2 2 357 0 0.5 1.0 1.5 2.0 2.5 3.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it04361 0 0 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it05252 mounted on a ceramic board (600mm 2 5 0.8mm) 1unit a s o drain-to-source voltage, v ds -- v drain current, i d -- a 2 3 5 7 2 3 5 7 2 3 5 7 --10 --1.0 --0.1 --0.01 it05251 v ds = -- 6v i d = --1.5 a i dp = --6.0a i d = --1.5a operation in this area is limited by r ds (on). 100ms dc operation 1ms 10ms <10 m s ta=25 c single pulse mounted on a ceramic board (600mm 2 5 0.8mm) 1unit [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] sw time -- i d ciss, coss, crss -- v ds drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf 0 --2 --4 --6 --8 --10 --12 100 10 7 5 3 2 5 3 2 --0.1 23 5 23 7 --1.0 it04359 100 10 7 5 3 2 7 5 3 2 3 2 it04360 f=1mhz ciss coss crss v dd = -- 6v v gs = --4.5 v t d (on) t d (off) t r t f
CPH5812 no.7467-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of november, 2004. specifications and information herein are subject to change without notice. ps [sbd] 7 0.01 23 7 0.1 0 52 2 37 1.0 5 12 10 8 6 4 2 3 time, t -- s surge forward current, i fsm (peak) -- a it00626 i fsm -- t i s 20ms t current waveform 50hz sine wave reverse voltage, v r -- v c -- v r interterminal capacitance, c -- pf [sbd] [sbd] 1.0 10 2 2 3 5 100 1000 1.0 10 7 2 3 5 7 2 3 5 7 357 2 f=1mhz it00625 0 0 0.5 1.0 1.0 0.8 0.9 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.5 2.5 3.0 2.0 it08545 (2) (3) (4) (1) p f (av) -- i o average forward current, i o -- a average forward power dissipation, p f (av) -- w 180 360 q 360 (1)rectangular wav e q =60 (2)rectangular wav e q =120 (3)rectangular wav e q =180 (4)sine wav e q =180 sine wave rectangular wave note on usage : since the CPH5812 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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